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Abe, Shinichiro; Sato, Tatsuhiko; Kato, Takashi*; Matsuyama, Hideya*
no journal, ,
Radiation-induced charges in semiconductor device cause temporary and non-destructive faults (the so-called soft errors) in microelectronic devices. The model which estimates charges collected in the storage node of a memory element quickly and accurately is necessary to evaluate soft error rate by simulation. In our previous study, it was found that charge collection efficiency in FinFET change with the position and the amount of deposited charge. In this study, we construct the multiple sensitive volume model to estimate collected charge for FinFET. We obtained arbitrary charge deposition events by PHITS and analyzed charge collection of these events for by 3-D TCAD simulator HyENEXSS, the simple sensitive volume model and the multiple sensitive volume model. From the comparisons of the collected charges, it is found that the accuracy of collected charge calculation is improved by considering the variations of charge collection efficiency accompanying the position and the amount of deposited charge.
Kai, Takeshi; Ogawa, Tatsuhiko; Abe, Shinichiro; Sato, Tatsuhiko
no journal, ,
A general purpose particle transport simulation code, PHITS can simulate the radiation behavior in arbitrary 3-D systems. Then, this code is applied to researches of several fields which are related to radiation transport phenomena. However, as the code has a cutoff energy of 1 keV for electron transport calculation in materials, it is difficult to study microscopic radiation interaction. To clear the problem, we implemented track structure code into the PHITS to study microscopic behavior of low energy electrons below 1 keV. The implement made it possible to calculate the localized energy deposition of nanoscale by the low energy electrons in materials. Various application studies involved in microscopic radiation interaction such as a DNA damage simulation will be expected using this track-structure simulation mode.
/AlGaN interface property deposited by PECVDTerashima, Daiki*; Watanabe, Kenta*; Yamada, Takahiro*; Nozaki, Mikito*; Shih, H.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.
no journal, ,
Impact of input power and substrate temperature of SiO deposition by plasma-enhanced CVD on SiO/AlGaN interface was investigated by means of electrical characterization of MOS capacitors. Synchrotron radiation photoemission spectroscopy revealed that Ga oxide component on AlGaN surface increases with increasing input power of PECVD. MOS capacitors with SiO gate insulator deposited at low input power shows relatively better SiO/AlGaN interface quality, despite degraded interface quality for the sample with SiO deposited at high input power. These results suggest that AlGaN surface oxidation during oxide deposition should be controlled to obtain good interface property.
Kimata, Tetsuya*; Kakitani, Kenta*; Yamamoto, Shunya*; Taguchi, Tomitsugu*; Matsumura, Daiju; Shimoyama, Iwao; Iwase, Akihiro*; Kobayashi, Tomohiro*; Yamaki, Tetsuya*; Terai, Takayuki*
no journal, ,
Quite recently, the Pt nanoparticles on the Ar-ion-irradiated glassy carbon (GC) substrate have been found to exhibit high oxygen reduction reaction (ORR) activity due to electronic and structural effects through the irradiation lattice defects in the support. We performed X-ray absorption fine structure (XAFS) measurements to investigate the interface between GC and the Pt nanoparticles. The extended X-ray absorption fine structure at the Pt L
edge demonstrated that the Pt-Pt bond length in the Pt nanoparticles was shorter on the Ar-ion-irradiated GC substrate than on the non-irradiated one. Therefore, the electronic interaction at the interface would modify the atomic structure of the supported Pt nanoparticles, thereby improving their ORR activity. This invited talk, called the JSAP young scientist presentation award speech, reviews what our strategy of the XAFS measurements should be for the mechanistic understanding of the GC/Pt-nanoparticle interface and enhanced ORR activity.
Sakai, Takuro; Iikura, Hiroshi; Yamada, Naoto*; Sato, Takahiro*; Ishii, Yasuyuki*; Uchida, Masaya*
no journal, ,
no abstracts in English
Ajikawa, Yusuke*; Yamamoto, Yukio*; Yoshida, Hikaru; Yoshigoe, Akitaka
no journal, ,
A very small amount of gas control was indispensable for surface reaction experiments under ultrahigh vacuum conditions. Normally, it has been performed with a variable leak valve by the manual operation. However, the manual operation can not apply for advanced experiments such as multi-measurements. The automatic precise valve control would lead to the burden reduction and reproducible improvement. The antomatic control also has a metrit to avid the loss of control for the apparatus. In this conference, we will report recent developments of the automatic pressure control system and some results of precise pressure control from 10
to 10
Pa.
H
on Cu(410)Makino, Takamasa*; Tsuda, Yasutaka*; Yoshida, Hikaru; Yoshigoe, Akitaka; Okada, Michio*
no journal, ,
The de-hydrogenation reaction of hydrocarbon molecules at metal surface is important as an elementary process of graphene generation and various catalytic reactions. In order to investigate CH reactions at Cu(410) surface, CH molecular beams and synchrotron radiation X-rays photoelectron spectroscopy was used. We found that the chemical species which became dehydrogenation adsorbs at the surface when CH molecule has kinetic energy of 2 eV.
Pt(111)Tsuda, Yasutaka*; Makino, Takamasa*; Yoshida, Hikaru; Yoshigoe, Akitaka; Fukuyama, Tetsuya*; Okada, Michio*
no journal, ,
The oxidation with oxygen molecules is important in a metal corrosion process. In order to develop high noncorrosive materials, the understanding of oxidation processes is significant. In this study, the influence on oxidation reaction due to alloy ingredient difference was investigated by the comparison between CuAu(111) and CuPt(111) surfaces. It was found that the CuPt(111) surface has lower reactivity than the CuAu(111) surface.